sot-323 plastic-encapsulate transistors ktc4075 transistor (npn) features z excellent hfe linearity z high hfe z low noise z complementary to kta2014 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p d total device dissipation 100 mw t j junction temperature 1 50 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in m ax u nit collector-base breakdown voltage v (br)cb o i c = 100 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb =60v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a dc current gain h fe v ce = 6v, i c =2 ma 70 700 collector-emitter saturation voltage v cesat i c =100ma, i b = 10ma 0.25 v transition frequency f t v ce =10v, i c = 1ma 80 mhz collector output capacitance c ob v ce =10v, i e =0, f=1mhz 3.5 pf noise figure nf v ce =6v,i e =0.1ma, f=1khz,r g =10k ? 10 db classification of h fe rank o y gr bl range 70~140 120~240 200~400 350~700 marking lo ly lgr lbl so t -323 1. base 2 . emitter 3. collector t stg storage temperature -55 ~+ 1 50 thermal resistance from junction to ambient r ja 1250 /w 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,sep,2013
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